9789813237841 medium

Modeling and Electrothermal Simulation of SiC Power Devices (eBook)

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  • 80,232 Words
  • 464 Pages

The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.

Contents:
  • Introduction
  • Introduction to Semiconductor Properties
  • Introduction to Silvaco© ATLAS TCAD Software
  • Simulation Models and Parameters
  • Simulation and Key Factors
  • P-i-N Diode
  • Schottky Diode
  • Junction Barrier Schottky (JBS) Diode
  • Power MOSFET

Readership: This book is intended for students at all levels (undergraduate, graduate and research) as well as professionals.Silicon Carbide (Sic);Power MOSFET;p-i-n Diode;Schottky Diode;Jbs Diode;Power Semiconductor Devices;Transient Simulation;TCAD Modeling;Silvaco ATLAS0Key Features:
  • Electrothermal modeling and simulation of SiC power devices
  • Steady State and Transient Simulation explained using sample code
  • Detailed explanation of modeling/simulation techniques

The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.

Contents:
  • Introduction
  • Introduction to Semiconductor Properties
  • Introduction to Silvaco© ATLAS TCAD Software
  • Simulation Models and Parameters
  • Simulation and Key Factors
  • P-i-N Diode
  • Schottky Diode
  • Junction Barrier Schottky (JBS) Diode
  • Power MOSFET

Readership: This book is intended for students at all levels (undergraduate, graduate and research) as well as professionals.Silicon Carbide (Sic);Power MOSFET;p-i-n Diode;Schottky Diode;Jbs Diode;Power Semiconductor Devices;Transient Simulation;TCAD Modeling;Silvaco ATLAS0Key Features:
  • Electrothermal modeling and simulation of SiC power devices
  • Steady State and Transient Simulation explained using sample code
  • Detailed explanation of modeling/simulation techniques


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Modeling and Electrothermal Simulation of SiC Power Devices

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